Electronic transport in silicon nanocrystals and nanochains
نویسندگان
چکیده
0167-9317/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.mee.2009.03.123 q This paper was presented in MNE 2008 c www.mne-conf.org. * Corresponding author. Address: Department of E neering, Imperial College London, South Kensington C Tel.: +44 207 5946232. E-mail address: [email protected] (Z.A.K. D 1 JSPS Fellow. Si nanocrystals and nanochains, prepared by material synthesis, provide a means to define nanoscale devices using growth rather than lithographic techniques. Electronic transport in thin films of Si nanocrystals is influenced strongly by single-electron charging and quantum-confinement effects, and by the grain boundary regions between nanocrystals. This paper reviews electronic transport mechanisms in Si nanocrystal materials. These include thermionic emission of electrons across grain boundaries, space charge limited current, hopping transport, and single-electron charging effects. The fabrication of singleelectron devices in Si nanocrystal thin films and nanochains is considered, particularly with regards to their operation at room temperature. 2009 Elsevier B.V. All rights reserved.
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تاریخ انتشار 2009